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The AFEM-S257 module integrates multiple high-performance
technologies to reduce PCB board footprint, while simplifying design and
manufacturing and shortening time to market. Utilizing Avago proprietary
0.25-µm GaAs enhancement-mode pHEMT process and leading-edge Film Bulk
Acoustic Resonator (FBAR) filtering technologies, the module delivers
superior performance across voltage and temperature levels. FBAR
technology delivers steep roll-off and low insertion loss, resulting in
extended battery life and talk time and better signal quality. With high
noise rejection of 35 dBc, the module enables fewer interference issues
between IEEE 802.16 WiMAX and other radios. The AFEM-S257 module
achieves 24 dBm of WiMAX-compliant output power, while maintaining an
error vector magnitude (EVM) of 2.5 percent at 16 quadrature amplitude
modulation (QAM).
Avago will have a live demonstration of the AFEM-S257 module, and will
exhibit its complete RF and Microwave portfolio, at the 2011 IEEE
Microwave Theory & Techniques Society International Microwave Symposium
in booth number 1602 at the Baltimore Convention Center from June 7-9.
“The AFEM-S257 front-end module provides a complete, compact solution
that can be easily and quickly designed in to mobile WiMAX applications,
which is demonstrated in the top three reference designs addressing this
market,” said James Wilson, senior director of marketing for wireless
products at Avago. “With Avago FBAR filtering technology delivering
unparalleled out-of-band rejection, the module offers the performance
major smartphone makers demand.”
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